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BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS

Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BD645 Collector-base voltage (IE = 0) BD647 BD649 BD651 BD645 Collector-emitter voltage (IB = 0) BD647 BD649 BD651 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot 1/2LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ C C C V V UNIT
This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD645 V(BR)CEO IC = 30 mA IB = 0 (see Note 5) BD647 BD649 BD651 VCE = 30 V ICEO Collector-emitter cut-off current VCE = 40 V VCE = 50 V VCE = 60 V VCB = 60 V VCB = 80 V VCB = 100 V ICBO Collector cut-off current VCB = 120 V VCB = 40 V VCB = 50 V VCB = 60 V VCB = 70 V IEBO hFE VCE(sat) VBE(sat) VBE(on) Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage VEB = VCE = IB = IB = IB = VCE = 5V 3V 12 mA 50 mA 50 mA 3V IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IC = 3A 3A 5A 5A 3A TC = 150C TC = 150C TC = 150C TC = 150C (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 2 2.5 3 2.5 V V V BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 MIN 60 80 100 120 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2.0 2.0 2.0 2.0 5 mA mA mA V TYP MAX UNIT
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.0 62.5 UNIT C/W C/W
2
MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS130AD
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
2*0 tp = 300 s, duty cycle < 2% IB = I C / 100
TCS130AB
hFE - Typical DC Current Gain
TC = -40C TC = 25C TC = 100C 10000
1*5
1000
1*0
VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10
TC = -40C TC = 25C TC = 100C 0*5 0*5 1*0 IC - Collector Current - A 10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C
TCS130AC
2*5
2*0
1*5
1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10
Figure 3.
MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
10
SAS130AC
IC - Collector Current - A
1*0
0*1
0.01 1*0
BD645 BD647 BD649 BD651 10 100 1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C
TIS130AC
Figure 5.
4
MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
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